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RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description Bulk Through Hole PNP DARLINGTON WITH BUILT-IN DIODE AND RESISTOR Bipolar (BJT) Transistor 1000 @ 3A 4V 8A 80W 4MHz
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Buying Options
Total Price: USD $1.06
Unit Price: USD $1.056
≥1 USD $1.056
≥10 USD $0.848848
≥100 USD $0.672672
≥500 USD $0.57017
≥1000 USD $0.464473
≥3000 USD $0.437246
Inventory: 889
Minimum: 1
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Technical Details

Compliance

RoHS Status ROHS3 Compliant

Technical

Frequency - Transition 4MHz
Current - Collector (Ic) (Max) 8A
Voltage - Collector Emitter Breakdown (Max) 60V
Vce Saturation (Max) @ Ib, Ic 2.5V @ 80mA, 8A
JEDEC-95 Code TO-220AB
Current - Collector Cutoff (Max) 50μA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 3A 4V
Transistor Type PNP - Darlington
Polarity/Channel Type PNP
Power - Max 80W
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Number of Elements 1
Qualification Status COMMERCIAL
JESD-30 Code R-PSFM-T3
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position SINGLE
Terminal Finish MATTE TIN
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Packaging Bulk
Operating Temperature -65°C~150°C TJ

Physical

Transistor Element Material SILICON
Surface Mount NO
Package / Case TO-220-3
Mounting Type Through Hole

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