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RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description Bulk Through Hole NPN DARLINGTON WITH BUILT-IN DIODE AND RESISTOR Bipolar (BJT) Transistor 1000 @ 3A 4V 8A 80W 4MHz
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Buying Options
Total Price: USD $0.92
Unit Price: USD $0.9152
≥1 USD $0.9152
≥10 USD $0.8712
≥100 USD $0.8272
≥500 USD $0.7744
≥1000 USD $0.7568
Inventory: 220
Minimum: 1
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Technical Details

Physical

Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON

Technical

Operating Temperature -65°C~150°C TJ
Packaging Bulk
JESD-609 Code e3
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish MATTE TIN
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 0.06
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT APPLICABLE
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT APPLICABLE
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status COMMERCIAL
Number of Elements 1
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Power - Max 80W
Polarity/Channel Type NPN
Transistor Type NPN - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 3A 4V
Current - Collector Cutoff (Max) 50μA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 2.5V @ 80mA, 8A
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 8A
Transition Frequency 80MHz
Frequency - Transition 4MHz

Compliance

RoHS Status ROHS3 Compliant

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