BU323Z
RoHS
/
Package TO-218-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
POWER BIPOLAR TRANSISTOR, NPN
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Inventory: 7843
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
Frequency - Transition 2MHz
Transition Frequency 2MHz
Current - Collector (Ic) (Max) 10A
Voltage - Collector Emitter Breakdown (Max) 350V
Vce Saturation (Max) @ Ib, Ic 1.7V @ 250mA, 10A
Current - Collector Cutoff (Max) 100μA
DC Current Gain (hFE) (Min) @ Ic, Vce 500 @ 5A 4.6V
Transistor Type NPN - Darlington
Polarity/Channel Type NPN
Transistor Application SWITCHING
Power - Max 150W
Case Connection COLLECTOR
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Number of Elements 1
Qualification Status COMMERCIAL
JESD-30 Code R-PSFM-T3
Pin Count 3
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 240
Terminal Position SINGLE
Terminal Finish TIN LEAD
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code no
JESD-609 Code e0
Packaging Tube
Operating Temperature -65°C~175°C TJ
Physical
Transistor Element Material SILICON
Surface Mount NO
Package / Case TO-218-3
Mounting Type Through Hole
Alternative Model
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