BD680A
RoHS
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Package TO-225AA, TO-126-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Tube Through Hole PNP DARLINGTON WITH BUILT-IN DIODE AND RESISTOR Bipolar (BJT) Transistor 750 @ 2A 3V 4A 40W 80V
PDF
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Buying Options
Total Price: USD $0.1
Unit Price: USD $0.10355
≥1 USD $0.10355
≥10 USD $0.08455
≥100 USD $0.0817
≥500 USD $0.0798
≥1000 USD $0.07695
Inventory: 3725
Minimum: 1
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
Current - Collector (Ic) (Max) 4A
Voltage - Collector Emitter Breakdown (Max) 80V
Vce Saturation (Max) @ Ib, Ic 2.8V @ 40mA, 2A
Current - Collector Cutoff (Max) 500μA
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 2A 3V
Transistor Type PNP - Darlington
Polarity/Channel Type PNP
Transistor Application AMPLIFIER
Power - Max 40W
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Number of Elements 1
Qualification Status COMMERCIAL
JESD-30 Code R-PSFM-T3
Pin Count 3
Time@Peak Reflow Temperature-Max (s) 30
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) 240
Terminal Position SINGLE
Terminal Finish TIN LEAD
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code no
JESD-609 Code e0
Packaging Tube
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount NO
Package / Case TO-225AA, TO-126-3
Mounting Type Through Hole
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