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Package TO-225AA, TO-126-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description POWER BIPOLAR TRANSISTOR, PNP
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Inventory: 4701
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Technical Details

Physical

Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Surface Mount NO
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Bulk
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN LEAD
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 240
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status COMMERCIAL
Number of Elements 1
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Power - Max 40W
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Transistor Type PNP - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 2A 3V
Current - Collector Cutoff (Max) 500μA
Vce Saturation (Max) @ Ib, Ic 2.8V @ 40mA, 2A
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 4A

Compliance

RoHS Status Non-RoHS Compliant

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