RoHS
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Package TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bulk Through Hole PNP SINGLE Bipolar (BJT) Transistor 60 @ 2mA 5V 300mA 625mW 50V
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
Current - Collector (Ic) (Max) 300mA
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 2mA 5V
Transistor Type PNP
Polarity/Channel Type PNP
Transistor Application AMPLIFIER
Power - Max 625mW
Configuration SINGLE
Number of Elements 1
Qualification Status COMMERCIAL
JESD-30 Code O-PBCY-T3
Pin Count 3
Reach Compliance Code unknown
Terminal Position BOTTOM
Terminal Finish NOT SPECIFIED
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Packaging Bulk
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount NO
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Mounting Type Through Hole
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