2N5550RLRP
RoHS
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Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
SMALL SIGNAL BIPOLAR TRANSISTOR
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
Frequency - Transition 300MHz
Transition Frequency 100MHz
Current - Collector (Ic) (Max) 600mA
Voltage - Collector Emitter Breakdown (Max) 140V
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 100nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA 5V
Transistor Type NPN
Polarity/Channel Type NPN
Transistor Application AMPLIFIER
Power - Max 625mW
Configuration SINGLE
Number of Elements 1
Qualification Status COMMERCIAL
JESD-30 Code O-PBCY-T3
Pin Count 3
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 240
Terminal Position BOTTOM
Terminal Finish TIN LEAD
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code no
JESD-609 Code e0
Packaging Tape & Box (TB)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount NO
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Mounting Type Through Hole
Alternative Model
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