DTD143ECT116
RoHS 
RoHS compliant
RoHS compliantPackage TO-236-3, SC-59, SOT-23-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased
Description
Tape & Reel (TR) Surface Mount NPN SINGLE WITH BUILT-IN RESISTOR Pre-Biased Bipolar Transistor (BJT) 47 @ 50mA 5V 500nA 200mW 200MHz
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Buying Options
Total Price: USD $0.32
Unit Price: USD $0.3168
≥1 USD $0.3168
≥10 USD $0.21648
≥100 USD $0.1056
≥500 USD $0.08807
≥1000 USD $0.061195
Inventory: 1185
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 13 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Transistor Element Material SILICON
Technical
Packaging Tape & Reel (TR)
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
Additional Feature BUILT IN BIAS RESISTOR RATIO IS 1
HTS Code 8541.21.00.75
Subcategory BIP General Purpose Small Signal
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Pin Count 3
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Operating Temperature (Max) 150°C
Number of Elements 1
Configuration SINGLE WITH BUILT-IN RESISTOR
Power - Max 200mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 47 @ 50mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 200MHz
Max Breakdown Voltage 50V
Frequency - Transition 200MHz
Resistor - Base (R1) 4.7 k Ω
Resistor - Emitter Base (R2) 4.7 k Ω
VCEsat-Max 0.3 V
Compliance
RoHS Status ROHS3 Compliant
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