Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA 5V
Current - Collector Cutoff (Max) 500nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 50μA, 500μA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 250MHz
Frequency - Transition 250MHz
Resistor - Base (R1) 200 k Ω
Collector Emitter Voltage (VCEO) 50V
Transistor Type NPN - Pre-Biased
Transistor Application SWITCHING
Element Configuration Single
Time@Peak Reflow Temperature-Max (s) 10
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 200mW
Subcategory BIP General Purpose Small Signal
Additional Feature BUILT-IN BIAS RESISTOR
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Terminal Finish TIN SILVER COPPER
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Packaging Tape & Reel (TR)