Resistor - Emitter Base (R2) 47 k Ω
Resistor - Base (R1) 22 k Ω
Frequency - Transition 250MHz
Max Breakdown Voltage 50V
Transition Frequency 250MHz
Collector Emitter Breakdown Voltage 50V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500μA, 5mA
Current - Collector Cutoff (Max) 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA 10V
Max Collector Current 50mA
Collector Emitter Voltage (VCEO) 150mV
Transistor Type NPN - Pre-Biased
Polarity/Channel Type NPN
Transistor Application SWITCHING
Configuration SINGLE WITH BUILT-IN RESISTOR
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 150mW
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 2.1
Moisture Sensitivity Level (MSL) 1 (Unlimited)