Resistor - Emitter Base (R2) 2.2 k Ω
Continuous Collector Current 100mA
Resistor - Base (R1) 2.2 k Ω
Max Breakdown Voltage 50V
Transition Frequency 250MHz
Collector Emitter Breakdown Voltage 50V
Vce Saturation (Max) @ Ib, Ic 200mV @ 1mA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 20mA 10V
Max Collector Current 100mA
Collector Emitter Voltage (VCEO) 200mV
Transistor Type NPN - Pre-Biased
Transistor Application SWITCHING
Element Configuration Single
Max Power Dissipation 150mW
Subcategory BIP General Purpose Small Signal
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 1
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)