Resistor - Emitter Base (R2) 4.7 k Ω
Resistor - Base (R1) 4.7 k Ω
Frequency - Transition 200MHz
Max Breakdown Voltage 50V
Transition Frequency 200MHz
Collector Emitter Breakdown Voltage 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce 47 @ 50mA 5V
Max Collector Current 500mA
Collector Emitter Voltage (VCEO) 300mV
Transistor Type PNP - Pre-Biased
Polarity/Channel Type PNP
Transistor Application SWITCHING
Configuration SINGLE WITH BUILT-IN RESISTOR
Operating Temperature (Max) 150°C
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) 10
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 200mW
Subcategory BIP General Purpose Small Signal
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1
Terminal Finish Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)