Resistor - Emitter Base (R2) 4.7 k Ω
Resistor - Base (R1) 4.7 k Ω
Frequency - Transition 250MHz
Max Breakdown Voltage 50V
Transition Frequency 250MHz
Collector Emitter Breakdown Voltage 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Current - Collector Cutoff (Max) 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA 5V
Max Collector Current 100mA
Collector Emitter Voltage (VCEO) 300mV
Transistor Type PNP - Pre-Biased
Polarity/Channel Type PNP
Transistor Application SWITCHING
Element Configuration Single
Time@Peak Reflow Temperature-Max (s) 10
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 200mW
Subcategory BIP General Purpose Small Signal
Additional Feature BUILT IN BIAS RESISTOR RATIO IS 1
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Packaging Tape & Reel (TR)