Resistor - Emitter Base (R2) 47 k Ω
Resistor - Base (R1) 22 k Ω
Frequency - Transition 250MHz
Transition Frequency 250MHz
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500μA, 5mA
Current - Collector Cutoff (Max) 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA 10V
Transistor Type PNP - Pre-Biased + Diode
Polarity/Channel Type PNP
Transistor Application SWITCHING
Configuration SINGLE WITH BUILT-IN RESISTOR
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 2.1
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Packaging Tape & Reel (TR)