Resistor - Emitter Base (R2) 47 k Ω
Resistor - Base (R1) 2.2 k Ω
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA
Current - Collector Cutoff (Max) 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA 10V
Transistor Type PNP - Pre-Biased
Polarity/Channel Type PNP
Transistor Application SWITCHING
Configuration SINGLE WITH BUILT-IN RESISTOR
Qualification Status COMMERCIAL
Time@Peak Reflow Temperature-Max (s) 40
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) 260
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 21.36
Terminal Finish MATTE TIN
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)