UNR421D00A
RoHS
/
Package 3-SSIP
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased
Description
Tape & Box (TB) Through Hole NPN - Pre-Biased Pre-Biased Bipolar Transistor (BJT) 30 @ 5mA 10V 100mA 300mW 150MHz
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Technical Details
Physical
Mounting Type Through Hole
Package / Case 3-SSIP
Supplier Device Package NS-B1
Technical
Packaging Tape & Box (TB)
Published 2003
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 300mW
Transistor Type NPN - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 150MHz
Resistor - Base (R1) 47 kOhms
Resistor - Emitter Base (R2) 10 kOhms
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