UNR411E00A
RoHS
/
Package 3-SSIP
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased
Description
TRANS PREBIAS PNP 300MW NS-B1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Technical
Resistor - Emitter Base (R2) 22 kOhms
Resistor - Base (R1) 47 kOhms
Frequency - Transition 80MHz
Max Breakdown Voltage 50V
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Collector Emitter Breakdown Voltage 50V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA
Current - Collector Cutoff (Max) 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA 10V
Max Collector Current 100mA
Collector Emitter Voltage (VCEO) 250mV
Transistor Type PNP - Pre-Biased
Power - Max 300mW
Current Rating -100mA
Max Power Dissipation 300mW
Voltage - Rated DC -50V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2003
Packaging Tape & Box (TB)
Physical
Supplier Device Package NS-B1
Package / Case 3-SSIP
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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