Resistor - Emitter Base (R2) 22 k Ω
Continuous Collector Current 100mA
Resistor - Base (R1) 22 k Ω
Max Breakdown Voltage 50V
Collector Emitter Saturation Voltage 250mV
Collector Emitter Breakdown Voltage 50V
Vce Saturation (Max) @ Ib, Ic 250mV @ 500μA, 10mA
Current - Collector Cutoff (Max) 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA 10V
Max Collector Current 100mA
Collector Emitter Voltage (VCEO) 50V
Transistor Type NPN - Pre-Biased
Transistor Application SWITCHING
Element Configuration Single
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 125mW
Additional Feature BUILT IN BIAS RESISTOR RATIO IS 1
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)