Current - Collector Cutoff (Max) 1μA
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage 50V
Collector Emitter Saturation Voltage 250mV
Max Breakdown Voltage 50V
Resistor - Base (R1) 2.2 k Ω
Continuous Collector Current 500mA
Resistor - Emitter Base (R2) 10 k Ω
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 100mA 10V
Max Collector Current 500mA
Collector Emitter Voltage (VCEO) 50V
Transistor Type NPN - Pre-Biased
Transistor Application SWITCHING
Element Configuration Single
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 200mW
Additional Feature BUILT IN BIAS RESISTOR RATIO IS 4.55
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)