DRA9114E0L
RoHS 
RoHS compliant
RoHS compliantPackage SC-89, SOT-490
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased
Description
Bipolar Transistors - Pre-Biased TRANS W/ BLT-IN RES FLT LD 1.6x1.6mm
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Buying Options
Total Price: USD $0.33
Unit Price: USD $0.3325
≥1 USD $0.3325
≥10 USD $0.27265
≥100 USD $0.2641
≥500 USD $0.25555
≥1000 USD $0.247
Inventory: 4675
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 10 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-89, SOT-490
Number of Pins 3
Transistor Element Material SILICON
Technical
Packaging Tape & Reel (TR)
Published 2009
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Operating Temperature 150°C
Additional Feature BUILT IN BIAS RESISTOR RATIO IS 1
HTS Code 8541.21.00.95
Max Power Dissipation 125mW
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number DRA9114
Number of Elements 1
Polarity PNP
Element Configuration Single
Transistor Application SWITCHING
Transistor Type PNP - Pre-Biased
Collector Emitter Voltage (VCEO) -50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 500μA, 10mA
Collector Emitter Breakdown Voltage 50V
Collector Emitter Saturation Voltage -250mV
Max Breakdown Voltage 50V
Resistor - Base (R1) 10 k Ω
Continuous Collector Current -100mA
Resistor - Emitter Base (R2) 10 k Ω
Dimensions
Height 600μm
Length 1.6mm
Width 850μm
Compliance
RoHS Status RoHS Compliant
Alternative Model
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