DRA2123E0L
RoHS 
RoHS compliant
RoHS compliantPackage TO-236-3, SC-59, SOT-23-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased
Description
Bipolar Transistors - Pre-Biased TRANS W/ BLT-IN RES GL WNG 2.9x2.8mm
PDF
/
Inventory: 6175
Minimum: /
The more specific your information, the faster response you will get.
Please complete the following form with the details of your request part and
contact information to get a quote.
Quotation Consultation
Technical Details
Compliance
RoHS Status RoHS Compliant
Dimensions
Width 1.5mm
Length 2.9mm
Height 1.1mm
Technical
Resistor - Emitter Base (R2) 2.2 k Ω
Continuous Collector Current -100mA
Resistor - Base (R1) 2.2 k Ω
Max Breakdown Voltage 50V
Collector Emitter Saturation Voltage -300mV
Collector Emitter Breakdown Voltage 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Current - Collector Cutoff (Max) 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce 6 @ 5mA 10V
Max Collector Current 100mA
Collector Emitter Voltage (VCEO) -50V
Transistor Type PNP - Pre-Biased
Transistor Application SWITCHING
Element Configuration Single
Polarity PNP
Number of Elements 1
Base Part Number DRA2123
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Terminal Position DUAL
Max Power Dissipation 200mW
HTS Code 8541.21.00.95
Additional Feature BUILT IN BIAS RESISTOR RATIO IS 1
Max Operating Temperature 150°C
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Discontinued
Packaging Tape & Reel (TR)
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-236-3, SC-59, SOT-23-3
Mounting Type Surface Mount
Mount Surface Mount
Supply Chain
Factory Lead Time 10 Weeks
Alternative Model
Recommended For You
DRA2123E0L+price,DRA2123E0L+datasheet,DRA2123E0L+in stock,buy+DRA2123E0L,finder+DRA2123E0L,DRA2123E0L+tutorials,DRA2123E0L+download