DRA2115E0L
RoHS 
RoHS compliant
RoHS compliantPackage TO-236-3, SC-59, SOT-23-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased
Description
Bipolar Transistors - Pre-Biased TRANS W/ BLT-IN RES GL WNG 2.9x2.8mm
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Technical Details
Supply Chain
Factory Lead Time 10 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Packaging Tape & Reel (TR)
Published 2009
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Operating Temperature 150°C
Additional Feature BUILT IN BIAS RESISTOR RATIO IS 1
HTS Code 8541.21.00.95
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number DRA2115
Number of Elements 1
Polarity PNP
Element Configuration Single
Power Dissipation 200mW
Transistor Application SWITCHING
Transistor Type PNP - Pre-Biased
Collector Emitter Voltage (VCEO) -50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 500μA, 10mA
Collector Emitter Breakdown Voltage 50V
Collector Emitter Saturation Voltage -250mV
Max Breakdown Voltage 50V
Resistor - Base (R1) 100 k Ω
Continuous Collector Current -100mA
Resistor - Emitter Base (R2) 100 k Ω
Dimensions
Height 1.1mm
Length 2.9mm
Width 1.5mm
Compliance
RoHS Status RoHS Compliant
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