Resistor - Emitter Base (R2) 4.7 k Ω
Resistor - Base (R1) 4.7 k Ω
Collector Emitter Breakdown Voltage 50V
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max) 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 5mA 10V
Max Collector Current 100mA
Collector Emitter Voltage (VCEO) 50V
Transistor Type PNP - Pre-Biased
Transistor Application SWITCHING
Element Configuration Single
Max Power Dissipation 254mW
Subcategory BIP General Purpose Small Signal
Additional Feature BUILT IN BIAS RESISTOR RATIO IS 1
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)