MUN5235T1
RoHS
/
Package SC-70, SOT-323
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased
Description
Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Technical
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT IN BIAS RESISTOR RATIO 21.36
Subcategory BIP General Purpose Small Signal
Voltage - Rated DC 50V
Max Power Dissipation 202mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating 100mA
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number MUN52**T
Pin Count 3
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 202mW
Transistor Application SWITCHING
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage 50V
hFE Min 80
Resistor - Base (R1) 2.2 k Ω
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 47 k Ω
Compliance
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Alternative Model
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