Resistor - Emitter Base (R2) 10 k Ω
Continuous Collector Current 100mA
Resistor - Base (R1) 10 k Ω
Max Breakdown Voltage 50V
Collector Emitter Breakdown Voltage 50V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA
Current - Collector Cutoff (Max) 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA 10V
Max Collector Current 100mA
Collector Emitter Voltage (VCEO) 50V
Transistor Type NPN - Pre-Biased
Halogen Free Halogen Free
Transistor Application SWITCHING
Element Configuration Single
Base Part Number MUN52**T
Time@Peak Reflow Temperature-Max (s) 40
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 202mW
Subcategory BIP General Purpose Small Signal
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)