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MUN2111T1

ON Semiconductor
RoHS
/
Package TO-236-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased
Description Cut Tape (CT) Surface Mount Single 3 Pre-Biased Bipolar Transistor (BJT) 100mA 230mW 50V 150C
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Buying Options
Total Price: USD $0.01
Unit Price: USD $0.01425
≥1 USD $0.01425
≥10 USD $0.0114
≥100 USD $0.0114
≥500 USD $0.0114
≥1000 USD $0.01045
≥10000 USD $0.0095
Inventory: 8703
Minimum: 1
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Technical Details

Compliance

Lead Free Contains Lead
RoHS Status Non-RoHS Compliant

Technical

Continuous Collector Current 100mA
DC Current Gain-Min (hFE) 35
hFE Min 35
Collector Emitter Breakdown Voltage 50V
Max Collector Current 100mA
Collector Emitter Voltage (VCEO) 250mV
Transistor Application SWITCHING
Power Dissipation 230mW
Element Configuration Single
Polarity PNP
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PDSO-G3
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Current Rating -100mA
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Terminal Position DUAL
Max Power Dissipation 230mW
Voltage - Rated DC -50V
Subcategory BIP General Purpose Small Signal
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Terminal Finish Tin/Lead (Sn80Pb20)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e0
Published 2006
Packaging Cut Tape (CT)

Physical

Package / Case TO-236-3
Mount Surface Mount

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