Resistor - Emitter Base (R2) 22 k Ω
Resistor - Base (R1) 47 k Ω
Collector Emitter Breakdown Voltage 50V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA
Current - Collector Cutoff (Max) 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA 10V
Max Collector Current 100mA
Collector Emitter Voltage (VCEO) 250mV
Transistor Type PNP - Pre-Biased
Halogen Free Halogen Free
Transistor Application SWITCHING
Element Configuration Single
Max Power Dissipation 246mW
Subcategory BIP General Purpose Small Signal
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 0.47
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)