Resistor - Emitter Base (R2) 47 k Ω
Resistor - Base (R1) 47 k Ω
Power Dissipation-Max (Abs) 0.15W
Frequency - Transition 250MHz
Transition Frequency 250MHz
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Current - Collector Cutoff (Max) 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce 68 @ 5mA 5V
Transistor Type NPN - Pre-Biased
Polarity/Channel Type NPN
Transistor Application SWITCHING
Configuration SINGLE WITH BUILT-IN RESISTOR
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) 10
Peak Reflow Temperature (Cel) 260
Subcategory BIP General Purpose Small Signal
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)