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Package TO-225AA, TO-126-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description TRANS NPN DARL 60V 1A TO-126
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Technical Details

Compliance

Lead Free Contains Lead
RoHS Status Non-RoHS Compliant

Technical

Max Breakdown Voltage 60V
Collector Emitter Breakdown Voltage 60V
Vce Saturation (Max) @ Ib, Ic 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max) 1μA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 6500 @ 1A 10V
Max Collector Current 1A
Collector Emitter Voltage (VCEO) 1.8V
Transistor Type NPN - Darlington
Polarity/Channel Type NPN
Transistor Application AMPLIFIER
Case Connection ISOLATED
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSFM-T3
Current Rating 1A
Reach Compliance Code unknown
Terminal Position SINGLE
Max Power Dissipation 5W
Voltage - Rated DC 60V
Subcategory Other Transistors
HTS Code 8541.29.00.95
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2003
Packaging Bulk
Operating Temperature 150°C TJ

Physical

Transistor Element Material SILICON
Package / Case TO-225AA, TO-126-3
Mounting Type Through Hole
Mount Through Hole

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