2SD14500SA
RoHS
/
Package 3-SSIP
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Tape & Box (TB) Through Hole NPN 2SD1450 Bipolar (BJT) Transistor 300 @ 500mA 2V 500mA 300mW 200MHz
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Technical Details
Compliance
Lead Free Contains Lead
RoHS Status Non-RoHS Compliant
Technical
Frequency - Transition 200MHz
Max Breakdown Voltage 20V
Current - Collector (Ic) (Max) 500mA
Voltage - Collector Emitter Breakdown (Max) 20V
Collector Emitter Breakdown Voltage 20V
Vce Saturation (Max) @ Ib, Ic 400mV @ 20mA, 500mA
Current - Collector Cutoff (Max) 100nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 500mA 2V
Max Collector Current 500mA
Collector Emitter Voltage (VCEO) 400mV
Transistor Type NPN
Power - Max 300mW
Base Part Number 2SD1450
Current Rating 500mA
Max Power Dissipation 300mW
Voltage - Rated DC 20V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2003
Packaging Tape & Box (TB)
Operating Temperature 150°C TJ
Physical
Supplier Device Package NS-B1
Package / Case 3-SSIP
Mounting Type Through Hole
Mount Through Hole
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