2SD1423A
RoHS
/
Package 3-SSIP
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
TRANS NPN 50V 0.5A NS-B1
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Technical Details
Compliance
Lead Free Contains Lead
RoHS Status Non-RoHS Compliant
Technical
Frequency - Transition 200MHz
Max Breakdown Voltage 50V
Transition Frequency 200MHz
Collector Emitter Breakdown Voltage 50V
Vce Saturation (Max) @ Ib, Ic 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max) 1μA
DC Current Gain (hFE) (Min) @ Ic, Vce 85 @ 150mA 10V
Max Collector Current 500mA
Collector Emitter Voltage (VCEO) 600mV
Transistor Type NPN
Polarity/Channel Type NPN
Transistor Application AMPLIFIER
Configuration SINGLE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSIP-T3
Base Part Number 2SD1423
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Current Rating 500mA
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position SINGLE
Max Power Dissipation 300mW
Voltage - Rated DC 50V
Subcategory Other Transistors
HTS Code 8541.21.00.75
Terminal Finish Tin/Lead (Sn/Pb)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e0
Published 2003
Packaging Cut Tape (CT)
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Package / Case 3-SSIP
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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