2SD12110S
RoHS
/
Package TO-226-3, TO-92-3 Long Body
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bulk Through Hole NPN Non-RoHS Compliant Bipolar (BJT) Transistor 185 @ 150mA 10V 500mA 1W 200MHz
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
Frequency - Transition 200MHz
Max Breakdown Voltage 120V
Current - Collector (Ic) (Max) 500mA
Voltage - Collector Emitter Breakdown (Max) 120V
Collector Emitter Breakdown Voltage 120V
Vce Saturation (Max) @ Ib, Ic 1V @ 30mA, 300mA
DC Current Gain (hFE) (Min) @ Ic, Vce 185 @ 150mA 10V
Max Collector Current 500mA
Collector Emitter Voltage (VCEO) 1V
Transistor Type NPN
Power - Max 1W
Current Rating 500mA
Max Power Dissipation 1W
Voltage - Rated DC 120V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2003
Packaging Bulk
Operating Temperature 150°C TJ
Physical
Supplier Device Package TO-92L-A1
Package / Case TO-226-3, TO-92-3 Long Body
Mounting Type Through Hole
Mount Through Hole
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