2SD0946B
RoHS
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Package TO-225AA, TO-126-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
TRANS NPN DARL 80V 1A TO-126
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Technical Details
Compliance
Lead Free Contains Lead
RoHS Status Non-RoHS Compliant
Technical
Frequency - Transition 150MHz
Max Breakdown Voltage 80V
Transition Frequency 150MHz
Collector Emitter Breakdown Voltage 80V
Vce Saturation (Max) @ Ib, Ic 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max) 100nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 4000 @ 1A 10V
Max Collector Current 1A
Collector Emitter Voltage (VCEO) 1.8V
Transistor Type NPN - Darlington
Polarity/Channel Type NPN
Transistor Application AMPLIFIER
Configuration DARLINGTON WITH BUILT-IN RESISTOR
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSFM-T3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Current Rating 1A
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position SINGLE
Max Power Dissipation 1.2W
Voltage - Rated DC 80V
HTS Code 8541.29.00.75
Terminal Finish TIN SILVER BISMUTH COPPER
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2008
Packaging Bulk
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-225AA, TO-126-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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