Frequency - Transition 4MHz
Max Breakdown Voltage 800V
Transition Frequency 4MHz
Collector Emitter Breakdown Voltage 800V
Vce Saturation (Max) @ Ib, Ic 600mV @ 160mA, 800mA
Current - Collector Cutoff (Max) 50μA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 6 @ 100mA 5V
Collector Emitter Voltage (VCEO) 600mV
Polarity/Channel Type NPN
Transistor Application SWITCHING
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) NOT SPECIFIED
Subcategory Other Transistors
Terminal Finish Tin/Bismuth (Sn/Bi)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature 150°C TJ