2SC3526H
RoHS
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Package TO-226-3, TO-92-3 Long Body
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Transistor NPN Epitaxial Planar TO-92L-A1 50vceo 20hfe 0.10aic
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Bulk
Published 2003
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN SILVER BISMUTH COPPER
HTS Code 8541.29.00.75
Subcategory Other Transistors
Max Power Dissipation 1W
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) 10
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 100mA 5V
Current - Collector Cutoff (Max) 10μA
Vce Saturation (Max) @ Ib, Ic 500mV @ 15mA, 150mA
Collector Emitter Breakdown Voltage 50V
Max Frequency 350MHz
Transition Frequency 350MHz
Collector Emitter Saturation Voltage 500mV
Max Breakdown Voltage 50V
Frequency - Transition 300MHz
Collector Base Voltage (VCBO) 110V
Emitter Base Voltage (VEBO) 3.5V
Dimensions
Height 8.6mm
Length 5.9mm
Width 4.9mm
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
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