2SB1030ARA
RoHS
/
Package 3-SSIP
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
TRANS PNP 50V 0.5A NS-B1
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Inventory: 5643
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Technical Details
Technical
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 150mA 10V
Current - Collector Cutoff (Max) 1μA
Vce Saturation (Max) @ Ib, Ic 600mV @ 30mA, 300mA
Collector Emitter Breakdown Voltage 50V
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 500mA
Max Breakdown Voltage 50V
Frequency - Transition 120MHz
Max Collector Current 500mA
Collector Emitter Voltage (VCEO) 600mV
Transistor Type PNP
Power - Max 300mW
Base Part Number 2SB1030
Current Rating -1A
Max Power Dissipation 300mW
Voltage - Rated DC -50V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2003
Packaging Tape & Box (TB)
Operating Temperature 150°C TJ
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
Physical
Supplier Device Package NS-B1
Package / Case 3-SSIP
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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