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Package TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description Bulk Through Hole NPN - Darlington TO-226AE Bipolar (BJT) Transistor 10000 @ 500mA 5V 100nA ICBO 1W 120V
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Buying Options
Total Price: USD $0.76
Unit Price: USD $0.7568
≥1 USD $0.7568
≥10 USD $0.65648
≥100 USD $0.454784
≥500 USD $0.379966
≥1000 USD $0.323382
≥3000 USD $0.288015
Inventory: 3383
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status RoHS Compliant

Technical

hFE Min 5000
Emitter Base Voltage (VEBO) 10V
Collector Base Voltage (VCBO) 120V
Collector Emitter Saturation Voltage 1.25V
Collector Emitter Breakdown Voltage 100V
Vce Saturation (Max) @ Ib, Ic 1.25V @ 8mA, 800mA
JEDEC-95 Code TO-226AE
Current - Collector Cutoff (Max) 100nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 10000 @ 500mA 5V
Max Collector Current 800mA
Collector Emitter Voltage (VCEO) 1.25V
Transistor Type NPN - Darlington
Polarity NPN
Number of Elements 1
Base Part Number ZTX614
Current Rating 800mA
Reach Compliance Code unknown
Terminal Position BOTTOM
Max Power Dissipation 1W
Voltage - Rated DC 100V
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
Published 2002
Packaging Bulk
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Weight 250mg
Number of Pins 3
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Mounting Type Through Hole
Mount Through Hole

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