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RoHS
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Package TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description TRANS NPN DARL 50V 1.2A TO-226
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No

Technical

Emitter Base Voltage (VEBO) 12V
Collector Base Voltage (VCBO) 60V
Collector Emitter Saturation Voltage 1V
Collector Emitter Breakdown Voltage 50V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 2mA, 1A
Current - Collector Cutoff (Max) 100nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 4000 @ 1A 5V
Max Collector Current 1.2A
Collector Emitter Voltage (VCEO) 50V
Transistor Type NPN - Darlington
Element Configuration Single
Polarity NPN
Number of Elements 1
Base Part Number TN6725A
Current Rating 1.2A
Terminal Position BOTTOM
Max Power Dissipation 1W
Voltage - Rated DC 50V
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e1
Packaging Bulk
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Mounting Type Through Hole
Mount Through Hole

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