TN6719A
RoHS
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Package TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bulk Through Hole NPN Single Bipolar (BJT) Transistor 40 @ 30mA 10V 100nA ICBO 1W 300V
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Inventory: 9467
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Technical
hFE Min 40
Emitter Base Voltage (VEBO) 7V
Collector Base Voltage (VCBO) 300V
Collector Emitter Saturation Voltage 750mV
Collector Emitter Breakdown Voltage 300V
Vce Saturation (Max) @ Ib, Ic 750mV @ 3mA, 30mA
Current - Collector Cutoff (Max) 100nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 30mA 10V
Max Collector Current 200mA
Collector Emitter Voltage (VCEO) 300V
Transistor Type NPN
Power Dissipation 1W
Element Configuration Single
Number of Elements 1
Current Rating 200mA
Max Power Dissipation 1W
Voltage - Rated DC 300V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Packaging Bulk
Operating Temperature -55°C~150°C TJ
Physical
Weight 250mg
Number of Pins 3
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 48 Weeks
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