TN5415A
RoHS
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Package TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bulk Through Hole PNP Single Bipolar (BJT) Transistor 30 @ 50mA 10V 100mA 1W 200V
PDF
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Buying Options
Total Price: USD $0.36
Unit Price: USD $0.361555
≥1 USD $0.361555
≥10 USD $0.341085
≥100 USD $0.32178
≥500 USD $0.30357
≥1000 USD $0.286388
Inventory: 1192
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Technical
hFE Min 30
Emitter Base Voltage (VEBO) 4V
Collector Base Voltage (VCBO) 200V
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 200V
Collector Emitter Breakdown Voltage 200V
Vce Saturation (Max) @ Ib, Ic 2.5V @ 5mA, 50mA
Current - Collector Cutoff (Max) 50μA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 50mA 10V
Max Collector Current 100mA
Collector Emitter Voltage (VCEO) 200V
Transistor Type PNP
Power - Max 1W
Power Dissipation 1W
Element Configuration Single
Polarity PNP
Number of Elements 1
Current Rating -100mA
Max Power Dissipation 1W
Voltage - Rated DC -200V
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Packaging Bulk
Operating Temperature -55°C~150°C TJ
Physical
Supplier Device Package TO-226-3
Number of Pins 3
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Mounting Type Through Hole
Mount Through Hole
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