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RoHS
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Package TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description Bulk Through Hole PNP Single Bipolar (BJT) Transistor 100 @ 150mA 10V 10nA ICBO 625mW 60V
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Buying Options
Total Price: USD $0.26
Unit Price: USD $0.2552
≥1 USD $0.2552
Inventory: 1384
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No

Technical

hFE Min 100
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 60V
Collector Emitter Breakdown Voltage 60V
Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max) 10nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Max Collector Current 800mA
Collector Emitter Voltage (VCEO) 60V
Transistor Type PNP
Power Dissipation 625mW
Element Configuration Single
Number of Elements 1
Current Rating -800mA
Max Power Dissipation 625mW
Voltage - Rated DC -60V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
Packaging Bulk
Operating Temperature -55°C~150°C TJ

Physical

Weight 250mg
Number of Pins 3
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Mounting Type Through Hole
Mount Through Hole

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