TIP33C
RoHS
/
Package TO-218-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Tube Through Hole NPN Single Bipolar (BJT) Transistor 20 @ 3A 4V 700muA 80W 3MHz
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Buying Options
Total Price: USD $2.64
Unit Price: USD $2.64
≥1 USD $2.64
≥10 USD $2.508
≥100 USD $2.376
≥500 USD $2.244
≥1000 USD $2.1912
Inventory: 232
Minimum: 1
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Technical Details
Supply Chain
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Physical
Mounting Type Through Hole
Package / Case TO-218-3
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -65°C~150°C TJ
hFE Min 40
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 100V
Collector Emitter Saturation Voltage 1V
Transition Frequency 3MHz
Collector Emitter Breakdown Voltage 100V
Vce Saturation (Max) @ Ib, Ic 4V @ 2.5A, 10A
Current - Collector Cutoff (Max) 700μA
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 3A 4V
Max Collector Current 10A
Collector Emitter Voltage (VCEO) 4V
Transistor Type NPN
Polarity/Channel Type NPN
Gain Bandwidth Product 3MHz
Transistor Application SWITCHING
Case Connection COLLECTOR
Power Dissipation 80W
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Time@Peak Reflow Temperature-Max (s) 30
Current Rating 10A
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) 240
Max Power Dissipation 80W
Voltage - Rated DC 140V
Subcategory Other Transistors
Terminal Finish Tin/Lead (Sn/Pb)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code no
JESD-609 Code e0
Published 2010
Packaging Tube
Compliance
Lead Free Lead Free
RoHS Status Non-RoHS Compliant
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