TIP32A
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bulk Through Hole PNP Single Bipolar (BJT) Transistor 10 @ 3A 4V 3A 2W 3MHz
PDF
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Buying Options
Total Price: USD $0.81
Unit Price: USD $0.8096
≥1 USD $0.8096
≥10 USD $0.76912
≥100 USD $0.72864
≥500 USD $0.68816
≥1000 USD $0.67144
Inventory: 98
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No
Dimensions
Width 4.83mm
Length 6.35mm
Height 6.35mm
Technical
hFE Min 10
Emitter Base Voltage (VEBO) -5V
Collector Base Voltage (VCBO) -60V
Frequency - Transition 3MHz
Max Breakdown Voltage 60V
Collector Emitter Saturation Voltage 1.2V
Max Frequency 3MHz
Current - Collector (Ic) (Max) 3A
Voltage - Collector Emitter Breakdown (Max) 60V
Collector Emitter Breakdown Voltage 60V
Vce Saturation (Max) @ Ib, Ic 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max) 200μA
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 3A 4V
Max Collector Current 3A
Collector Emitter Voltage (VCEO) 60V
Transistor Type PNP
Gain Bandwidth Product 3MHz
Power - Max 2W
Power Dissipation 2W
Element Configuration Single
Polarity PNP
Number of Elements 1
Base Part Number TIP32
Frequency 3MHz
Current Rating -3A
Max Power Dissipation 2W
Voltage - Rated DC -60V
Min Operating Temperature -65°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2010
Packaging Bulk
Operating Temperature 150°C TJ
Physical
Weight 1.214g
Supplier Device Package TO-220-3
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Contact Plating Tin
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