TIP31CTU
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bipolar Transistors - BJT NPN Epitaxial Sil
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Buying Options
Total Price: USD $0.22
Unit Price: USD $0.22135
≥1 USD $0.22135
≥10 USD $0.1824
≥100 USD $0.1767
≥500 USD $0.171
≥1000 USD $0.1653
Inventory: 507
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 6.35mm
Length 6.35mm
Height 6.35mm
Technical
hFE Min 10
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 100V
Max Breakdown Voltage 100V
Transition Frequency 3MHz
Collector Emitter Breakdown Voltage 100V
Vce Saturation (Max) @ Ib, Ic 1.2V @ 375mA, 3A
JEDEC-95 Code TO-220AB
Current - Collector Cutoff (Max) 300μA
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 3A 4V
Max Collector Current 3A
Collector Emitter Voltage (VCEO) 100V
Transistor Type NPN
Polarity/Channel Type NPN
Gain Bandwidth Product 3MHz
Transistor Application SWITCHING
Power Dissipation 2W
Element Configuration Single
Number of Elements 1
Base Part Number TIP31
Frequency 3MHz
Current Rating 3A
Max Power Dissipation 2W
Voltage - Rated DC 100V
Subcategory Other Transistors
Terminal Finish Tin (Sn)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Published 2013
Packaging Tube
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Weight 1.214g
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 days ago)
Factory Lead Time 6 Weeks
Alternative Model
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