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Package TO-220-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description Tube Through Hole NPN Single Bipolar (BJT) Transistor 10 @ 3A 4V 3A 40W 3MHz
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Buying Options
Total Price: USD $0.62
Unit Price: USD $0.616
≥1 USD $0.616
≥10 USD $0.505824
≥100 USD $0.367136
≥500 USD $0.306786
≥1000 USD $0.261096
≥3000 USD $0.23254
Inventory: 5687
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status Non-RoHS Compliant
REACH SVHC No SVHC
Radiation Hardening No

Dimensions

Width 4.83mm
Length 10.67mm
Height 16.51mm

Technical

hFE Min 10
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 100V
Frequency - Transition 3MHz
Max Breakdown Voltage 100V
Collector Emitter Saturation Voltage 1.2V
Max Frequency 3MHz
Current - Collector (Ic) (Max) 3A
Voltage - Collector Emitter Breakdown (Max) 100V
Collector Emitter Breakdown Voltage 100V
Vce Saturation (Max) @ Ib, Ic 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max) 300μA
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 3A 4V
Max Collector Current 3A
Collector Emitter Voltage (VCEO) 100V
Transistor Type NPN
Gain Bandwidth Product 3MHz
Power - Max 2W
Power Dissipation 40W
Element Configuration Single
Polarity NPN
Number of Elements 1
Base Part Number TIP31
Frequency 3MHz
Current Rating 3A
Max Power Dissipation 40W
Voltage - Rated DC 100V
Min Operating Temperature -65°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2008
Packaging Tube
Operating Temperature -65°C~150°C TJ

Physical

Weight 1.214g
Supplier Device Package TO-220AB
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Contact Plating Tin

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