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Package TO-220-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description Bulk Through Hole NPN Single Bipolar (BJT) Transistor 10 @ 3A 4V 3A 2W 3MHz
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Total Price: USD $0.44
Unit Price: USD $0.44
≥1 USD $0.44
Inventory: 152
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Radiation Hardening No

Technical

hFE Min 10
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 60V
Frequency - Transition 3MHz
Max Breakdown Voltage 60V
Collector Emitter Saturation Voltage 1.2V
Max Frequency 3MHz
Current - Collector (Ic) (Max) 3A
Voltage - Collector Emitter Breakdown (Max) 60V
Collector Emitter Breakdown Voltage 60V
Vce Saturation (Max) @ Ib, Ic 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max) 300μA
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 3A 4V
Max Collector Current 3A
Collector Emitter Voltage (VCEO) 60V
Transistor Type NPN
Gain Bandwidth Product 3MHz
Power - Max 2W
Power Dissipation 2W
Element Configuration Single
Polarity NPN
Number of Elements 1
Base Part Number TIP31
Frequency 3MHz
Current Rating 3A
Max Power Dissipation 2W
Voltage - Rated DC 60V
Min Operating Temperature -65°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2008
Packaging Bulk
Operating Temperature 150°C TJ

Physical

Weight 1.214g
Supplier Device Package TO-220-3
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Contact Plating Tin

Supply Chain

Factory Lead Time 6 Weeks

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