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Package TO-220-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description Bipolar Transistors - BJT PNP Epitaxial Sil
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Buying Options
Total Price: USD $3.36
Unit Price: USD $3.3649
≥1 USD $3.3649
≥10 USD $2.7607
≥100 USD $2.67425
≥500 USD $2.5878
≥1000 USD $2.5023
Inventory: 1135
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No

Dimensions

Width 4.83mm
Length 10.67mm
Height 16.51mm

Technical

hFE Min 15
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 100V
Max Breakdown Voltage 100V
Collector Emitter Saturation Voltage -700mV
Transition Frequency 3MHz
Collector Emitter Breakdown Voltage 100V
Vce Saturation (Max) @ Ib, Ic 700mV @ 125mA, 1A
JEDEC-95 Code TO-220AB
Current - Collector Cutoff (Max) 300μA
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 1A 4V
Max Collector Current 1A
Collector Emitter Voltage (VCEO) 100V
Transistor Type PNP
Polarity/Channel Type PNP
Gain Bandwidth Product 3MHz
Transistor Application SWITCHING
Power Dissipation 2W
Current 1A
Element Configuration Single
Voltage 100V
Number of Elements 1
Base Part Number TIP30
Frequency 3MHz
Current Rating -1A
Max Power Dissipation 2W
Voltage - Rated DC -100V
Subcategory Other Transistors
Terminal Finish Tin (Sn)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Published 2004
Packaging Tube
Operating Temperature 150°C TJ

Physical

Transistor Element Material SILICON
Weight 1.214012g
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole

Supply Chain

Lifecycle Status LAST SHIPMENTS (Last Updated: 2 days ago)
Factory Lead Time 36 Weeks

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