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RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description Bipolar Transistors - BJT NPN Epitaxial Sil
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Buying Options
Total Price: USD $0.78
Unit Price: USD $0.7832
≥1 USD $0.7832
≥10 USD $0.64064
≥100 USD $0.49852
Inventory: 407
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No

Dimensions

Width 6.35mm
Length 6.35mm
Height 6.35mm

Technical

hFE Min 15
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 40V
Frequency - Transition 3MHz
Max Breakdown Voltage 40V
Collector Emitter Saturation Voltage 700mV
Current - Collector (Ic) (Max) 1A
Voltage - Collector Emitter Breakdown (Max) 40V
Collector Emitter Breakdown Voltage 60V
Vce Saturation (Max) @ Ib, Ic 700mV @ 125mA, 1A
Current - Collector Cutoff (Max) 300μA
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 1A 4V
Max Collector Current 1A
Collector Emitter Voltage (VCEO) 40V
Transistor Type NPN
Gain Bandwidth Product 3MHz
Power - Max 2W
Power Dissipation 2W
Element Configuration Single
Polarity NPN
Number of Elements 1
Base Part Number TIP29
Frequency 3MHz
Current Rating 1A
Max Power Dissipation 2W
Voltage - Rated DC 40V
Min Operating Temperature -65°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Published 2013
Packaging Bulk
Operating Temperature 150°C TJ

Physical

Weight 1.214g
Supplier Device Package TO-220-3
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole

Supply Chain

Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Factory Lead Time 2 Weeks

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