TIP112
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bulk Through Hole NPN - Darlington Single Bipolar (BJT) Transistor 1000 @ 1A 4V 2A 2W 40MHz
PDF
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Buying Options
Total Price: USD $0.92
Unit Price: USD $0.9152
≥1 USD $0.9152
≥10 USD $0.8712
≥100 USD $0.8272
≥500 USD $0.7744
≥1000 USD $0.7568
Inventory: 193
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 6 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220-3
Weight 1.214g
Technical
Operating Temperature 150°C TJ
Packaging Bulk
Published 2007
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Voltage - Rated DC 100V
Max Power Dissipation 2W
Current Rating 2A
Base Part Number TIP112
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 50W
Power - Max 2W
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 1A 4V
Current - Collector Cutoff (Max) 2mA
Vce Saturation (Max) @ Ib, Ic 2.5V @ 8mA, 2A
Collector Emitter Breakdown Voltage 100V
Voltage - Collector Emitter Breakdown (Max) 100V
Current - Collector (Ic) (Max) 2A
Transition Frequency 40MHz
Collector Emitter Saturation Voltage 2.5V
Max Breakdown Voltage 100V
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 5V
hFE Min 500
Continuous Collector Current 2A
Dimensions
Height 12.7mm
Length 12.7mm
Width 12.7mm
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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