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Package TO-220-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description Tube Through Hole NPN - Darlington Single Bipolar (BJT) Transistor 1000 @ 1A 4V 2A 2W 60V
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Total Price: USD $0.44
Unit Price: USD $0.44
≥1 USD $0.44
Inventory: 101
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status Non-RoHS Compliant
REACH SVHC No SVHC
Radiation Hardening No

Dimensions

Width 6.35m
Length 6.35m
Height 6.35m

Technical

Continuous Collector Current 2A
hFE Min 500
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 60V
Max Breakdown Voltage 60V
Collector Emitter Saturation Voltage 2.5V
Current - Collector (Ic) (Max) 2A
Voltage - Collector Emitter Breakdown (Max) 60V
Collector Emitter Breakdown Voltage 100V
Vce Saturation (Max) @ Ib, Ic 2.5V @ 8mA, 2A
Current - Collector Cutoff (Max) 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 1A 4V
Max Collector Current 2A
Collector Emitter Voltage (VCEO) 60V
Transistor Type NPN - Darlington
Power - Max 2W
Power Dissipation 2W
Element Configuration Single
Polarity NPN
Number of Elements 1
Base Part Number TIP11*
Current Rating -8A
Max Power Dissipation 2W
Voltage - Rated DC -100V
Min Operating Temperature -65°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2007
Packaging Tube
Operating Temperature -65°C~150°C TJ

Physical

Weight 1.214g
Supplier Device Package TO-220AB
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole

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